Radiation induced defects in CVD-grown 3C-SiC

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 1732-1738

  Itoh, Hisayoshi ^a   Yoshikawa, Masahito ^a   Nashiyama, Isamu ^b   Misawa, Shunji ^b   Okumura, Hajime ^b   Yoshida, Sadafumi ^b  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON--CHEMICAL VAPOR DEPOSITION; CRYSTALS--DEFECTS; ELECTRONS; PROTONS;

ELECTRON SPIN RESONANCE; POINT DEFECTS;

SILICON CARBIDE;

EID: 0025594544     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101184     Document Type: Article

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