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Volumn 457-460, Issue I, 2004, Pages 477-480

Spin dependent recombination at deep-level centers in 6H silicon carbide/silicon metal oxide semiconductor field effect transistors

Author keywords

Electron Spin Resonance; Interface States; Trapping Centers

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); MOSFET DEVICES; PARAMAGNETIC RESONANCE; PROBABILITY; SEMICONDUCTOR MATERIALS; SPECTROMETERS;

EID: 8744262823     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.477     Document Type: Conference Paper
Times cited : (11)

References (22)
  • 11


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.