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Volumn 457-460, Issue I, 2004, Pages 477-480
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Spin dependent recombination at deep-level centers in 6H silicon carbide/silicon metal oxide semiconductor field effect transistors
a a a b |
Author keywords
Electron Spin Resonance; Interface States; Trapping Centers
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Indexed keywords
ANNEALING;
INTERFACES (MATERIALS);
MOSFET DEVICES;
PARAMAGNETIC RESONANCE;
PROBABILITY;
SEMICONDUCTOR MATERIALS;
SPECTROMETERS;
INTERFACE DEFECTS;
INTERFACE STATES;
SEMICONDUCTOR BANDGAP;
TRAPPING CENTERS;
SILICON CARBIDE;
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EID: 8744262823
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.457-460.477 Document Type: Conference Paper |
Times cited : (11)
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References (22)
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