EPR study of proton implantation induced intrinsic defects in 6H- and 4H-SiC

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 513-516

  Von Bardeleben, H J ^a   Cantin, J L ^a  

^a SORBONNE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; FERMI LEVEL; ION IMPLANTATION; PARAMAGNETIC RESONANCE; PROTONS; SEMICONDUCTOR DOPING;

ELECTRON PARAMAGNETIC RESONANCE SPECTROSCOPY; VACANCY DEFECT;

SILICON CARBIDE;

EID: 14344280266     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.513     Document Type: Article

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