Determination at 300 K of the hole capture cross section of chromium-boron pairs in p-type silicon

Applied Physics Letters

Volumn 89, Issue 23, 2006, Pages

  Dubois, S ^a,b   Palais, O ^b   Ribeyron, P J ^a  

^a CEA GRENOBLE   (France)

^b AIX MARSEILLE UNIVERSITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CARRIER CONCENTRATION; CHROMIUM; DISSOLUTION; HOLE TRAPS;

CARRIER RECOMBINATION; HOLE CAPTURE; RECOMBINATION PARAMETERS;

SEMICONDUCTING SILICON;

EID: 33845439595     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2402261     Document Type: Article

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