Analytic modeling for drain-induced barrier lowering phenomenon of the InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 10, 2002, Pages 5919-5923

  Lee, Ching Sung ^b   Hsu, Wei Chou ^a   Wu, Chang Luen ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHIENKUO TECHNOLOGY UNIVERSITY   (Taiwan)

^c Transcom Inc   (Taiwan)

Author keywords

Drain induced barrier lowing; Newton method; PDCFET; Short channel effect; Sub threshold

Indexed keywords

ELECTRIC POTENTIAL; GATES (TRANSISTOR); NONLINEAR EQUATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

DRAIN-INDUCED BARRIER LOWERING; NEWTON METHOD; PSEUDOMORPHIC DOPED-CHANNEL FIELD EFFECT TRANSISTOR; SHORT-CHANNEL EFFECT;

FIELD EFFECT TRANSISTORS;

EID: 0036818468     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5919     Document Type: Article

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