Characteristics of In0.52Al0.48As/In x Ga 1-x As HEMT's with various In x Ga 1-x As channels

Solid-State Electronics

Volumn 48, Issue 1, 2004, Pages 119-124

  Chen, Yen Wei ^a,b   Hsu, Wei Chou ^a   Hsu, Rong Tay ^b   Wu, Yue Huei ^b   Chen, Yeong Jia ^a,b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b South Epitaxy Corporation   (Taiwan)

Author keywords

InAlAs InGaAs heterostructure; InP based HEMT; LP MOCVD

Indexed keywords

CARRIER MOBILITY; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSCONDUCTANCE;

BARRIER LAYERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0142154125     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00287-9     Document Type: Article

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