Design and optimization of FinFETs for ultra-low-voltage analog applications

IEEE Transactions on Electron Devices

Volumn 54, Issue 12, 2007, Pages 3308-3316

  Kranti, Abhinav ^a   Armstrong, G Alastair ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

Analog computer circuits; Capacitances; Cutoff frequency; Early voltage; FinFETs; Gain; Intrinsic voltage gain; MOSFET; Source drain extension (SDE) region engineering; Transconductance to current ratio; Ultra low voltage (ULV) analog design; Voltage control

Indexed keywords

ANALOG CIRCUITS; ANALOG COMPUTERS; CAPACITANCE; CUTOFF FREQUENCY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; OPTIMIZATION; TRANSCONDUCTANCE;

ANALOG COMPUTER CIRCUITS; FIN FIELD EFFECT TRANSISTORS; INTRINSIC VOLTAGE GAIN; SOURCE/DRAIN EXTENSION (SDE) REGION ENGINEERING; TRANSCONDUCTANCE-TO-CURRENT RATIO;

MOSFET DEVICES;

EID: 36849092375     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.908596     Document Type: Article

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