Influence of annealing on structural, electrical and optical properties of Dy-doped ZnO thin films

Journal of Physics D: Applied Physics

Volumn 40, Issue 22, 2007, Pages 7041-7045

  Huang, Huiming ^a   Ruan, Xuefeng ^a   Fang, Guojia ^a   Li, Meiya ^a   Zhao, X Z ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DYSPROSIUM COMPOUNDS; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS; ZINC OXIDE;

ANNEALING TREATMENT; POST DEPOSITION ANNEALING; VAN DER PAUW MEASUREMENTS; ZINC OXIDE THIN FILMS;

THIN FILMS;

EID: 36448966831     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/22/026     Document Type: Article

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