Hetero-epitaxial growth of ZnO thin films by atmospheric pressure CVD method

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 431-434

  Kashiwaba, Y ^a   Katahira, F ^a   Haga, K ^a   Sekiguchi, T ^b   Watanabe, H ^a  

^a SENDAI NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; FILM GROWTH; SAPPHIRE; SEMICONDUCTING FILMS; SINGLE CRYSTALS; SUBSTRATES; THIN FILMS; ZINC OXIDE;

CRYSTALLINITY;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0034498375     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00729-6     Document Type: Article

References (11)

1. Roth A.P., Williams D.F. J. Electrochem. Soc. 128:1981;2684.
2. Hayamizu S., Tabata H., Tanaka H., Kawai T. J. Appl Phys. 80:1996;787.
3. Chen Y., Bagnall D.M., Zhu Z., Sekiguchi T., Park K., Hiraga K., Yao T., Koyama S., Shen M.Y., Goto T. J. Crystal Growth. 181:1997;165.
4. Kawasaki M., Ohtomo A., Ohkubo I., Koinuma1 H., Tang Z.K., Yu P., Wong G.K.L., Zhang B.P., Segawa Y. Mater. Sci. Eng. B. 56:1998;239.
5. Haga K., Kamidaira M., Kashiwaba Y., Sekiguchi T., Watanabe H. J. Cryst. Growth. 214/215:2000;77-80.
6. Sekiguchi T., Ohashi N., Terada Y. Jpn. J. Appl. Phys. 36:1997;L289.
7. Haga K., Katahira K., Watanabe H. Thin Solid Films. 343:1999;145.
8. Reeber R.R. J. Appl. Phys. 41:1970;5063.
9. Mitsuyu T., Ono S., Wasa K. J. Appl. Phys. 51:1980;2464.
10. Mason W.P. Crystal Physics of Interaction Processes. 1966;73 Academic Press, New York.
11. Shih W.C., Wu M.S. J. Crystal Growth. 137:1994;319.