Effects of structural defects on diode properties in 4H-SiC

Materials Research Society Symposium - Proceedings

Volumn 742, Issue , 2002, Pages 181-186

  Skromme, B J ^a   Palle, K C ^a   Mikhov, M K ^a   Meidia, H ^a   Mahajan, S ^a   Huang, X R ^b   Vetter, W M ^b   Dudley, M ^b   Moore, K ^c   Smith, S ^c   Gehoski, T ^c  

^a AZ 85281   (United States)

^b STONY BROOK UNIVERSITY   (United States)

^c MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DOPING (ADDITIVES); OXIDATION; SCHOTTKY BARRIER DIODES; SILICON WAFERS;

EPILAYERS;

SILICON CARBIDE;

EID: 0037842043     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-742-k3.4     Document Type: Conference Paper

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