High density Al2O3/TaN-based metal-insulator-metal capacitors in application to radio frequency integrated circuits

Chinese Physics

Volumn 16, Issue 9, 2007, Pages 2803-2808

  Ding, Shi Jin ^a   Huang, Yu Jian ^a   Huang, Yue ^a   Pan, Shao Hui ^a   Zhang, Wei ^a   Wang, Li Kang ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

Al2O3; Atomic layer deposition; Metal insulator metal; Radio frequency integrated circuit

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC LAYER DEPOSITION; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; MIM DEVICES; NATURAL FREQUENCIES;

HARD-BREAKDOWN PERFORMANCE; RADIO FREQUENCY INTEGRATED CIRCUIT; VOLTAGE STRESSES;

CAPACITORS;

EID: 36349024218     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/16/9/051     Document Type: Article

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