Annealing characteristics of ultra-thin high-K HfO2 gate dielectrics

Chinese Physics

Volumn 12, Issue 3, 2003, Pages 325-327

  De Dong, Han ^a   Jin Feng, Kang ^a   Chang Hai, Lin ^a   Ru Qi, Han ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Annealing characteristics; HfO2 gate dielectrics; High K

Indexed keywords

EID: 33749339827     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/12/3/314     Document Type: Article

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