Atomic-layer-deposited Al2O3-HfO2-Al 2O3 dielectrics for metal-insulator-metal capacitor applications

Applied Physics Letters

Volumn 87, Issue 5, 2005, Pages

  Ding, Shi Jin ^a   Zhu, Chunxiang ^b   Li, Ming Fu ^b   Zhang, David Wei ^a  

^a FUDAN UNIVERSITY   (China)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC FIELD EFFECTS; ELECTRIC INSULATORS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; NITRIDES; PERMITTIVITY; POLARIZATION; SILICON COMPOUNDS;

ELECTRICAL PERFORMANCES; METAL-INSULATOR-METAL CAPACITOR APPLICATIONS; RELAXATION TIME; SCHOTTKY EMISSION;

ALUMINA;

EID: 33645511865     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2005397     Document Type: Article

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