N-doped LaAlO3/Si(100) films with high-k, low-leakage current and good thermal stability

Chinese Physics Letters

Volumn 22, Issue 1, 2005, Pages 182-184

  Xiang, Wen Feng ^a   Lu, Hui Bin ^a   Chen, Zheng Hao ^a   He, Meng ^a   Lu, Xu Bing ^b,c   Liu, Li Feng ^a   Guo, Hai Zhong ^a   Zhou, Yue Liang ^a  

^a INSTITUTE OF PHYSICS   (China)

^b PEKING UNIVERSITY   (China)

^c MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DOPING (ADDITIVES); INTERFACES (MATERIALS); LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOELECTRON SPECTROSCOPY;

CHEMICAL NATURE; HIGH QUALITY; HIGH- K; LASER MOLECULAR BEAM EPITAXY; LEAKAGE CURRENT DENSITYS; LOW-LEAKAGE CURRENT; N-DOPED; NITROGEN GAS; SI(1 0 0); X RAY PHOTOEMISSION SPECTROSCOPY;

ALUMINUM COMPOUNDS;

EID: 24644465041     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/22/1/052     Document Type: Article

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