Fabrication and properties of the Y-doped Al2O3 high-k gate dielectric films

Wuli Xuebao/Acta Physica Sinica

Volumn 54, Issue 12, 2005, Pages 5901-5906

  Guo, De Feng ^a,b   Geng, Wei Gang ^a   Lan, Wei ^a   Huang, Chun Ming ^a   Wang, Yin Yue ^a  

^a LANZHOU UNIVERSITY   (China)

^b YANSHAN UNIVERSITY   (China)

Author keywords

Doped Al2O3; High k gate dielectric; Reactive radio frequency sputtering

Indexed keywords

EID: 30044435824     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)