High threshold voltage matching performance on gate-all-around MOSFET

Solid-State Electronics

Volumn 51, Issue 11-12, 2007, Pages 1450-1457

  Cathignol, Augustin ^a,b   Cros, Antoine ^a,b   Harrison, Samuel ^c   Cerrutti, Robin ^a   Coronel, Philippe ^a   Pouydebasque, Arnaud ^c   Rochereau, Krysten ^c   Skotnicki, Thomas ^a   Ghibaudo, Gérard ^b  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

^c NXP SEMICONDUCTORS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; MOSFET DEVICES; THRESHOLD VOLTAGE; TRANSISTORS;

DOPED CHANNEL TRANSISTORS; GATE-ALL-AROUND TRANSISTORS (GAA); MULTIPLE GATE TRANSISTORS;

SOLID STATE PHYSICS;

EID: 36248982093     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.09.033     Document Type: Article

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