Random dopant induced threshold voltage fluctuations in double gate MOSFET's

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 1, Issue , 2004, Pages 138-141

  Xia, Ling ^a   Gan, Xuewen ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MATHEMATICAL MODELS; NORMAL DISTRIBUTION; OPTIMIZATION; SILICON; STOCHASTIC CONTROL SYSTEMS; THRESHOLD VOLTAGE;

DG MOSFET; DOPANT DISTRIBUTIONS; DOPANT NUMBERS; SG MOSFET;

MOSFET DEVICES;

EID: 21644477520     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. R. W. Keyes, Appl. Phys, vol. 8, p.251-259 (1975).
2. Tomohisa Mizuno, Jun-ichi, Akira Toriumi, IEEE Trans. Electron Devices, Vol.41, No.11, p.2216-2221 (1994).
3. Peter A. Stolk, Frans P. Widdershoven, D.B.M. Klaassen, IEEE Trans. Electron Devices, Vol.45, No.9, p.1960-1971 (1998).
4. Yuri Yasuda, Makoto Takamiya, Toshiro Hiramoto, IEEE Trans. Electron Devices, Vol 47, No. 10, p. 1838-1842 (2000).
5. Pascale Francis, Akira Terao, Denis Flandre, IEEE Trans. Electron Devices, Vol.1, No.5, p.715-719 (1994).
6. Suzuki, K, Tanaka, T, Horie, H., VLSI Process and Device Modeling, 1993. (1993 VPAD) p.150-151 (1993).
7. Kazumi Nishinohara, Naoyuki Shigyo, Tetsunori Wada, IEEE Trans. Electron Devices, Vol.39, No.3, p.634-639 (1992).