Effect of charge in junction termination extension passivation dielectrics

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 189-192

  Trost, Jason R ^a   Ridley Sr , Rodney S ^a   Khan, M Kamal ^a   Grebs, Thomas ^a   Evans, Howard ^a   Arthur, Stephen ^a  

^a National Center for Health Statistics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; ELECTRIC BREAKDOWN; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; IONS; PASSIVATION; POWER INTEGRATED CIRCUITS; RELIABILITY; SEMICONDUCTOR DIODES; THIN FILMS;

EDGE TERMINATION; HIGH TEMPERATURE REVERSE BIAS STRESSING; JUNCTION TERMINATION EXTENSION; REVERSE BIAS ELECTRIC FIELD STRENGTH; VOLTAGE SLUMPING;

SEMICONDUCTOR JUNCTIONS;

EID: 0032598921     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ispsd.1999.764094     Document Type: Article

References (6)