Mobility comparison between front and back channels in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors by the front-gate split capacitance-voltage method

Applied Physics Letters

Volumn 89, Issue 3, 2006, Pages

  Ohata, Akiko ^a   Cristoloveanu, Sorin ^a   Cassé, Mikael ^b  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; GATES (TRANSISTOR); MOSFET DEVICES; SCATTERING; THIN FILMS;

BACK CHANNEL; COULOMB SCATTERING; FRONT CHANNEL; MOBILITY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33746314514     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2222255     Document Type: Article

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