Performance and reliability concerns of ultra-thin SOI and ultra-thin gate oxide MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 847-850

  Toriumi, Akira ^a   Koga, Junji ^a   Satake, Hideki ^a   Ohata, Akiko ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; LOW TEMPERATURE PROPERTIES; MICROSCOPIC EXAMINATION; OXIDATION; RAMAN SPECTROSCOPY; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SILICON ON INSULATOR TECHNOLOGY; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES;

CHARGE PUMPING MEASUREMENT; COULOMB SCATTERING RATE; FINITE DRAIN BIAS EFFECT; MICROSCOPIC RAMAN SPECTROSCOPY; PHONON SCATTERING RATE; SHUBNIKOV DE HAAS EFFECT; SUBSTATE BIAS EFFECT;

MOSFET DEVICES;

EID: 0029547949     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)