TiN metal gate thickness influence on fully depleted SOI MOSFETs physical and electrical properties

Proceedings - IEEE International SOI Conference

Volumn 2005, Issue , 2005, Pages 30-31

  Widlez, J ^a,b   Vinet, M ^a   Poiroux, T ^a   Holliger, P ^a   Previtali, B ^a   Grosgeorges, P ^a   Mouis, M ^a,c   Deleonibus, S ^a  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DIELECTRIC PROPERTIES; ELECTRIC POTENTIAL; INSULATION; THICKNESS CONTROL; TIN COMPOUNDS; TRANSISTORS;

CHANNEL MOBILITY; ELECTRICAL OXIDE THICKNESS (EOT); GATE DIELECTRICS; TIN LAYER;

MOS DEVICES;

EID: 33644620726     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2005.1563523     Document Type: Conference Paper

References (3)

1. H. Wakabayashi et al., IEDM Tech. Digest, p.447, 1996.
2. S. Maîtrejean et al., MRS Fall Meeting, 2003.
3. M.Moriwaki et al., JJAP, 40, p.2679, 2001.