The material design to reduce outgassing in acetal based chemically amplified resist for EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6153 II, Issue , 2006, Pages

  Masuda, Seiya ^a   Kawanishi, Yasutomo ^a   Hirano, Shuuji ^a   Kamimura, Sou ^a   Mizutani, Kazuyoshi ^a   Yasunami, Shoichiro ^a   Kawabe, Yasumasa ^a  

^a FUJIFILM CORPORATION   (Japan)

Author keywords

Chemical amplified resist; EUV lithography; Outgassing

Indexed keywords

DEGASSING; DISSOLUTION; OPTIMIZATION; PHOTOLITHOGRAPHY; ULTRAVIOLET RADIATION; VAN DER WAALS FORCES;

CHEMICAL AMPLIFIED RESIST; EUV LITHOGRAPHY; VAN DER WAALS VOLUME;

PHOTORESISTS;

EID: 33745626478     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.656238     Document Type: Conference Paper

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