High-quality polycrystalline silicon films with minority carrier lifetimes over 5 μs formed by flash lamp annealing of precursor amorphous silicon films prepared by catalytic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 11, 2007, Pages 7198-7203

  Ohdaira, Keisuke ^a   Nishizaki, Shogo ^a   Endo, Yohei ^a   Fujiwara, Tomoko ^a   Usami, Noritaka ^b   Nakajima, Kazuo ^b   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Crystallization; Flash lamp annealing; High pressure water vapor annealing; Minority carrier lifetime; Polycrystalline Si

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; CARRIER LIFETIME; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; POLYSILICON; SOLAR CELLS; THERMAL DIFFUSION;

CATALYTIC CHEMICAL VAPOR DEPOSITION (CAT-CVD); FLASH LAMP ANNEALING (FLA); HIGH-PRESSURE WATER VAPOR ANNEALING (HPWVA); MICROWAVE PHOTOCONDUCTIVITY DECAY;

THIN FILMS;

EID: 35948946558     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.7198     Document Type: Article

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