Application of plasma jet crystallization technique to fabrication of thin-film transistor

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 1-7, 2005, Pages

  Higashl, Seiichiro ^a   Kaku, Hirotaka ^a   Murakami, Hideki ^a   Miyazaki, Seiichi ^a   Watakabe, Hajime ^b   Ando, Nobuyuki ^b   Sameshima, Toshiyuki ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Crystallization; Plasma jet; Thermal plasma; Thin film transistor

Indexed keywords

ANNEALING; CRYSTALLIZATION; LASER APPLICATIONS; MELTING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA SOURCES; RAMAN SCATTERING; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS; THIN FILM TRANSISTORS;

EXCIMER LASER ANNEALING (ELA); ORGANIC LIGHT-EMITTING DIODES (OLED); PLASMA JET CRYSTALLIZATION TECHNIQUE; SOLID-PHASE CRYSTALLIZATION (SPC);

PLASMA JETS;

EID: 17444403602     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L108     Document Type: Article

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