Rapid recrystallization of amorphous silicon utilizing very-high-frequency microplasma jet at atmospheric pressure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 10 B, 2006, Pages 8484-8487

  Ryo, Mina ^a   Sakurai, Yusuke ^a   Kobayashi, Tomohiro ^b   Shirai, Hajime ^a  

^a SAITAMA UNIVERSITY   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

Plasma annealing; Silicon; Thin film solar cells; Thin film transistor

Indexed keywords

ATMOSPHERIC PRESSURE; FLOW RATE; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; RECRYSTALLIZATION (METALLURGY); THIN FILM TRANSISTORS;

MICROPLASMA JET; PLASMA ANNEALING; THIN FILM SOLAR CELLS;

AMORPHOUS SILICON;

EID: 34547905034     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.8484     Document Type: Article

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