A new crystallization technique of Si films on glass substrate using thermal plasma jet

Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 8-11

  Kaku, H ^a   Higashi, S ^a   Taniguchi, H ^a   Murakami, H ^a   Miyazaki, S ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Crystallization; Polycrystalline Si; Thermal plasma jet; Thin film transistor

Indexed keywords

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; INDUCTIVELY COUPLED PLASMA; PLASMA SOURCES; PLASMA THEORY; THICKNESS MEASUREMENT; THIN FILM TRANSISTORS; THIN FILMS;

FULL WIDTH AT HIGH MAXIMUM (FWHM); POWER DENSITY; SI FILMS; THERMAL PLASMA JET;

CRYSTALLIZATION;

EID: 15844416911     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.10.059     Document Type: Conference Paper

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