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Thin Solid Films

Volumn 487, Issue 1-2, 2005, Pages 122-125

Crystallization of Si films on glass substrate using thermal plasma jet

(5) Higashi, S a Kaku, H a Taniguchi, H a Murakami, H a Miyazaki, S a

a HIROSHIMA UNIVERSITY (Japan)

Author keywords

Crystallization; Polycrystalline Si; Thermal plasma jet; Thin film transistor

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTALLIZATION; EXCIMER LASERS; GLASS; JETS; LIQUID CRYSTAL DISPLAYS; PHASE TRANSITIONS; POLYSILICON; THIN FILM TRANSISTORS;

EXCIMER LASER ANNEALING (ELA); INDUCED COUPLED PLASMA (ICP); ORGANIC LIGHT EMITTING DIODE (OLED); THERMAL PLASMA JET;

THIN FILMS;

EID: 22944442909 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2005.01.048 Document Type: Conference Paper

Times cited : (20)

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