Rectifying pyronine-B/p-type silicon junctions formed by sublimation of pyronine-B

Journal of Materials Science: Materials in Electronics

Volumn 15, Issue 1, 2004, Pages 47-53

  Cakar M ^a   Turut A ^b   Onganer, Y ^b  

^a KAHRAMANMARAS SUTCU IMAM UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; FLUORESCENCE; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR STRUCTURE; RELAXATION PROCESSES; SCHOTTKY BARRIER DIODES; SPECTROSCOPIC ANALYSIS; SUBLIMATION; SYNTHESIS (CHEMICAL);

METAL INDUCED GAP STATES (MIGS); SCHOTTKY BARRIER FORMATION;

SILICON;

EID: 0347762690     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1026297105615     Document Type: Article

References (26)

1. A. KEFFOUS, M. ZITOUNI, Y. BELKACEM, H. MENARI and W. CHERGUI, Appl. Surf. Sci. 199 (2002) 22.
2. A. ABDELGHANI, S. HUELI and K. CHERIF, Mater. Lett. 56 (2002) 1064.
3. Y. I. LIU and H. Z. YU, Chem. Phys. Chem. 3 (2002) 799.
4. P. S. ABTHAGIR and R. SARASWATHI, J. Appl. Polym. Sci. 81 (2001) 2127.
5. M. H. QIAO, T. CAO, J. F. DENG and G. Q. XU, Chem. Phys. Lett. 325 (2000) 508.
6. G. SCHOPF and G. KOSSMBHL, Adv. Polym. Sci. 129 (1997) 3.
7. X. ZHOU, B. L. LANGSDORF, F. E. JONES, M. C. LONERGAN, Inorg. Chim. Acta. 294 207 (1999).
8. S. R. FORREST, M. L. KAPLAN, P. H. SCHMIDT, W. L. FELDMANN and E. YANOWSKI, Appl. Phys. Lett. 41 (1982) 90.
9. S. R. FORREST, M. L. KAPLAN, P. H. SCHMIDT, J. Appl. Phys. 56 (1984) 543.
10. S. R. FORREST and F. F. SO, ibid. 64 (1988) 399.
11. S. ANTONE, N. TOMOZEIU and S. GOGONEA, Phys. Stat. Solidi A 125 (1991) 397.
12. M. ÇAKAR, Y. ONGANER and A. TÜRÜT, Synth. Met. 126 (2002) 213.
13. B. ACEMIOǦLU, M. ARIK, Y. ONGANER, J. Lumin. 97 (2002) 153.
14. E. H. RHODERICK, in "Metal-Semiconductor Contacts" (Oxford University Press, 1978) pp. 121, 136.
15. S. M. SZE, in "Physics of Semiconductor Devices," 2nd Edn (Wiley, New York, 1981) p. 245.
16. A. TÜRÜT, N. YALÇIN and M. SAǦLAM, Solid-State Electron 35 (1992) 835.
17. P. COVA, A. SINGH, A. MEDINA and R. A. MASUT, ibid. 42 (1998) 477.
18. S. K. CHEUNG and N. W. CHEUNG, Appl. Phys. Lett. 49 (1986) 85.
19. J. H. WERNER and H. H. GÜTTLER, J. Appl. Phys. 69 (1991) 1522.
20. W. MÖNCH, in "Semiconductor Surfaces and Interfaces", 2nd Edn. (Springer-Verlag, Berlin, 1995).
21. E. H. NICOLLIAN and A. GOETZBERGER, Bell. Sys. Tech. 46 (1967) 1055.
22. F. CHEKIR, C. BARRET and A. VAPAILLE, J. Appl. Phys. 54 (1983) 6474.
23. S. PANDEY and S. KAL, Solid-State Electron. 42 (1998) 943.
24. M. ZAMORA, G. K. REEVES, G. GAZECKI, I. MI and C. Y. YANG, Ibid. 43 (1999) 801.
25. P. CHATTOPADHYAY and B. RAYCHAUDHURI, ibid. 36 (1993) 605.
26. B. BATI, Ç. NUHOǦLU, M. SAǦLAM, E. AYYILDIZ and A. TÜRÜT, Phys. Scr. 61 (2000) 209.