Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates

Journal of Crystal Growth

Volumn 299, Issue 1, 2007, Pages 103-108

  Azize, M ^a,b   Bougrioua, Z ^a   Gibart, P ^a  

^a CNRS   (France)

^b LUMILOG   (France)

Author keywords

A1. Fe doping; A2. Regrowth interface pollution; A3. Characterization; A4. Metalorganic vapour phase epitaxy; B1. Nitride; B2. Semiconducting III V material

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY;

A1. FE DOPING; A2. REGROWTH INTERFACE POLLUTION; B2. SEMICONDUCTING III-V MATERIAL;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33846675575     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.250     Document Type: Article

References (9)

1. Heikman S., Keller S., Mates T., DenBaars S.P., and Mishra U.K. J. Crystal Growth 248 (2002) 513
2. Bougrioua Z., Azize M., Jimenez A., Braña A.-F., Lorenzini P., Beaumont B., Muñoz E., and Gibart P. Phys. Stat. Sol. (c) 2 7 (2003) 2424
3. Haffouz S., Tang H., Bardwell J.A., Hsu E.M., Webb J.B., and Srolfe R. Sol. Stat. Electron. 49 5 (2005) 802
4. Kuznetsov N.I., Nikolaev A.E., Szubrilov A., Melnikb V., and Dmitriev A. Appl. Phys. Lett. 75 20 (1999) 3138
5. Katzer D.S., Storm D.F., Bianri S.C., Roussos J.A., Shanabrook B.V., and Glaser E.R. J. Crystal Growth 251 (2003) 481
6. Bougrioua Z., Azize M., Lorenzini P., Laügt M., and Haas H. Phys. Stat. Sol. (a) 202 4 (2005) 536
7. Balmer R.S., Soley D.E.J., Simons A.J., Mace J.D., Koker L., Jackson P.O., Wallis D.J., Uren M.J., and Martin T. Phys. Stat. Sol. (c) 3 6 (2006) 1429
8. Heikman S., Keller S., Mates T., DenBaars S.P., and Mishra U.K. J. Crystal Growth 248 (2003) 513
9. Azize M., Bougrioua Z., Girard P., and Gibart P. Phys. Stat. Sol. (c) 2 5 (2005) 2153