MOVPE of GaN on sapphire using the alternate precursor 1,1-dimethylhydrazine

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 246-250

  Bourret Courchesne, E D ^a   Yu, Kin Man ^a   Irvine, S J C ^b   Stafford, A ^b   Rushworth, S A ^c   Smith, L M ^c   Kanjolia, R ^d  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b GLYNDWR UNIVERSITY   (United Kingdom)

^c Epichem Ltd   (United Kingdom)

^d Epichem Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR DYNAMICS; MOLECULAR STRUCTURE; MORPHOLOGY; PYROLYSIS; SAPPHIRE;

ADDUCTS; EPILAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034511240     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00693-X     Document Type: Article

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