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Volumn 42, Issue 5 A, 2003, Pages
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High-quality AlN by initial layer-by-layer growth on surface-controlled 4H-SiC(0001) substrate
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Author keywords
AlN; In plane misorientation; MBE; RHEED intensity oscillation; SiC; Surface control
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Indexed keywords
COMPOSITION;
CRYSTALLINE MATERIALS;
ENERGY GAP;
GROWTH (MATERIALS);
MOLECULAR BEAM EPITAXY;
PLASMA APPLICATIONS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SILICON CARBIDE;
SURFACE CHEMISTRY;
SURFACE STRUCTURE;
X RAY ANALYSIS;
X RAY PHOTOELECTRON SPECTROSCOPY;
PLASMA ASSISTED MOLECULAR BEAM EPITAXY;
X RAY ROCKING CURVE;
ALUMINUM NITRIDE;
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EID: 0037668199
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.42.l445 Document Type: Letter |
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Times cited : (61)
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References (12)
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