Low temperature metalorganic chemical vapor deposition of gallium nitride using dimethylhydrazine as nitrogen source

Thin Solid Films

Volumn 419, Issue 1-2, 2002, Pages 33-39

  Hsu, Yu Jen ^a   Hong, Lu Sheng ^a   Huang, Kau Fong ^a   Tsay, Jing En ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Chemical vapor deposition; Dimethylhydrazine; Gallium nitride; Growth mechanism

Indexed keywords

ADSORPTION; CHEMICAL BONDS; CONTAMINATION; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; PRESSURE EFFECTS; RATE CONSTANTS; STOICHIOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

EQUILIBRIUM CONSTANTS;

FILM GROWTH;

EID: 0036848642     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00781-2     Document Type: Article

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