OPC in memory-device patterns using boundary layer model for 3 dimensional mask topographic effect

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6520, Issue PART 1, 2007, Pages

  Kim, Young Chang ^a   Kim, Insung ^a   Park, Jeonggeun ^a   Kim, Sangwook ^a   Suh, Sungsoo ^a   Cheon, Yongjin ^a   Lee, Sukjoo ^a   Lee, Junghyeon ^a   Kang, Chang Jin ^a   Moon, Jootae ^a   Cobb, Jonathan ^b   Lee, Sooryong ^b  

^a SAMSUNG Electronics   (South Korea)

^b SYNOPSYS INC   (United States)

Author keywords

3D mask; ArF; Boundary layer model; Lithography; Optical proximity correction (OPC)

Indexed keywords

BOUNDARY LAYER MODEL (BLM); MEMORY DEVICE PATTERNS; POTENTIAL LIMITS; TOPOGRAPHIC EFFECT;

COMPACT DISKS; COMPUTER SIMULATION; GEOMETRY; IMAGE PROCESSING; MASKS; TOPOGRAPHY;

BOUNDARY LAYERS;

EID: 35148826038     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.711832     Document Type: Conference Paper

References (16)

1. A. K. Wong and A. R. Neureuther, "Mask topography effects in projection printing of phase-shifting masks," IEEE Trans. Electron Devices 41, 895-902 (1994).
2. M. S. Yeung and E. Barouch, "Limitation of the Kirchhoff boundary conditions for aerial image simulation in 157 nm optical lithography," IEEE Electron Device Lett. 21, 433-435 (2000).
3. J. L. Cobb et al., "The impact of mask topography on CD control." Proceedings of SPIE Vol. 5754 395-406 (2005).
4. Sook Lee et al., "Mask Topography Effect on OPC at Hyper NA Lithography", Proc. of SPIE, Vol. 6154, 61541R-1 (2006).
5. K. Adam and A. R. Neureuther, "Simplified models for edge transitions in rigorous mask modeling," in Optical Microlithography XIV, C. J. Progier, ed., Proc. SPIE 4346, 331-344 (2001).
6. J. Tirapu-Azpiroz and E. Yablonovitch, "Boundary Layer Model to Account for Thick Mask Effects in Photolithography", Proc. of SPIE, Vol. 5040, 1611-1619 (2003).
7. J. Tirapu-Azpiroz and E. Yablonovitch, "Fast evaluation of photomask near-fields in sub-wavelength 193 nm lithography," Proc. SPIE 5377, 1528-1535 (2004).
8. J. Tirapu-Azpiroz, "Analysis and modeling of photomask near-fields in subwavelength deep ultraviolet lithography," Ph.D. dissertation (University of California at Los Angeles, 2004).
9. M. Bai et al., "Approximation of Three Dimensional Mask Effects with Two Dimensional Features," Proc. SPIE 5751, 446-454 (2005).
10. Martin Drapeau et al., "A Practical Alternating PSM Modeling And OPC Approach To Deal With 3D Mask Effects For The 65nm Node And Beyond," Proc. of SPIE Vol. 5992 (2005).
11. S. W. Kim, Y.-C. Kim et al., "OPC to account for thick mask effect using simplified boundary layer model," Proc. SPIE Vol. 6349, (2006)
12. Y. Aksenov et al., "Compensation of high-NA mask topography effects by using object modified Kirchhoff model for 65 and 45nm nodes," Proc. SPIE 6154, (2006).
13. Y. Zhang et al., "A Focus Exposure Matrix Model for Full Chip Lithography Manufacturability Check and Optical Proximity Correction," Proc. of SPIE Vol. 6283 (2006)
14. A. Borjon et al., "Process Window OPC Verification: Dry versus Immersion Lithography for the 65 nm node," Proc. of SPIE Vol. 6154 (2006)
15. A. Krasnoperova et al., "Process Window OPC for Reduced Process Variability and Enhanced Yield," Proc. of SPIE Vol. 6154 (2006)
16. R. L. Burns et al., "Improvements in Post-OPC Data Constraints for Enhanced Process Corrections," Proc. of SPIE Vol. 6154 (2006)