Process window OPC verification: Dry versus immersion lithography for the 65 nm node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6154 III, Issue , 2006, Pages

  Borjon, Amandine ^a,e   Belledent, Jérôme ^a   Trouiller, Yorick ^c   Lucas, Kevin ^b   Couderc, Christophe ^a   Sundermann, Frank ^d   Urbani, Jean Christophe ^d   Rody, Yves ^a   Gardin, Christian ^b   Foussadier, Frank ^d   Schiavone, Patrick ^e  

^a NXP SEMICONDUCTORS   (Netherlands)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c CEA LETI   (France)

^d STMICROELECTRONICS   (France)

^e CEA GRENOBLE   (France)

Author keywords

Failure prediction; OPC; ORC; Process window; Resist modelling

Indexed keywords

FAILURE (MECHANICAL); IMAGING TECHNIQUES; MATHEMATICAL MODELS; ROBUSTNESS (CONTROL SYSTEMS);

FAILURE PREDICTION; OPC; ORC; PROCESS WINDOW; RESIST MODELLING;

LITHOGRAPHY;

EID: 33745786568     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.657056     Document Type: Conference Paper

References (3)

1. "Optical Imaging in Projection Microlithography", A. K. Wong, SPIE press, chapter 9, p. 181, 2005.
2. "Reconstructing 3-D light-microscopic images by digital image processing", A. Erhardt, Applied Optics, vol. 24, No 2, 1985.
3. "Assessment of different simplified resist models", D. Fuard et al. Proc. of SPIE, Vol 4691, p 1266-1277, 2002.