A practical alternating PSM modeling and OPC approach to deal with 3D mask effects for the 65nm node and beyond

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5992, Issue 1, 2005, Pages

  Drapeau, Martin ^a   Van Adrichem, Paul J M ^a   Van Look, Lieve ^b   Kasprowicz, Bryan S ^c  

^a SYNOPSYS INC   (United States)

^b IMEC   (Belgium)

^c PHOTRONICS INC   (United States)

Author keywords

Alternating Phase Shifting Mask; Image Imbalance; Optical Proximity Correction; Resolution Enhancement Technique

Indexed keywords

IMAGE ENHANCEMENT; LIGHT SCATTERING; OPTICAL RESOLVING POWER; PHASE SHIFT;

ALTERNATING PHASE SHIFTING MASK; IMAGE IMBALANCE; OPTICAL PROXIMITY CORRECTION; RESOLUTION ENHANCEMENT TECHNIQUE;

MASKS;

EID: 33644588307     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.632040     Document Type: Conference Paper

References (5)

1. A. Kroyan et al., Effects of Alternating Aperture PSM Design on Image Imbalance for 65nm Technology, Numerical Technologies Inc., SPIE 4889 (2002), 1217-1226
2. V. Philipsen et al., Through-pitch characterization and printability for 65nm half-pitch alternating aperture phase shift applications, IMEC, PMJ2005-5853-108
3. L. Van Look et al., Image Imbalance Compensation in Alternating PSM for through-pitch imaging, IMEC, BACUS 5992-65 (2005)
4. J. Tirapu-Azpiroz et al., Boundary Layer Model to Account for Thick Mask Effects in Photolithography, SPIE, 5040 (2003), 1611-1619
5. M. Bai et al., Approximation of three dimensional mask effects with two dimensional features, Synopsys Inc., SPIE 5751 (2005), p. 446-454