Linewidth roughness reduction at the 55 nm node through combination of classical process optimization and application of surface conditioner solutions

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6153 II, Issue , 2006, Pages

  Wong, Patrick ^a   Gehoel, Wendy ^a   Sinkwitz, Stephan ^a   Zhang, Peng ^b   Jaramillo Jr , Manuel ^b   Rao, Madhukar B ^b   Horvath, Bridget ^b   Ross, Brenda ^b   Cassel, Shawn ^b  

^a ASML   (Netherlands)

^b AIR PRODUCTS AND CHEMICALS INC   (United States)

Author keywords

55 nm dense lines; ArF; Hard Bake (HB); LWR; Process optimization; Process window; Surface conditioner

Indexed keywords

OPTICAL ENGINEERING; OPTIMIZATION; PROCESS ENGINEERING; SURFACE TREATMENT; THERMAL EFFECTS;

55 NM DENSE LINES; ARF; HARD BAKE (HB); LWR; PROCESS OPTIMIZATION; PROCESS WINDOW; SURFACE CONDITIONER;

SURFACE ROUGHNESS;

EID: 33745591950     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.657875     Document Type: Conference Paper

References (4)

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2. A. R. Pawloski, A. Acheta, H. J. Levinson, T. Michaelson, C. G. Willson, "Gradients in Chemically Amplified Resist Define Lithographically Generated Line Edge Roughness" Proceedings ARCH Interface 2004.
3. Gregg M. Gallatin, "Resist Blur and Line Edge Roughness", in Optical Microlithography XVIII, B. W. Smith, Ed., Proc. SPIE 5754, 38-52 (2005).
4. P. Zhang, M. Jaramillo, M. Rao, B. ROSS, B. Horvath, P. Wong, W. Gehoel, S. Sinkwitz, "Combined Pattern Collapse and LWR Control at 70 nm Node through Application of Novel Surface Conditioner Solutions", in Advances in Resist Technology and Processing XII, J. L. Sturtevant, Ed., Proc. SPIE, 5753, 1018-1023, (2005).