On the origin of the excess low-frequency noise in graded-channel silicon-on-insulator nMOSFETs

IEEE Electron Device Letters

Volumn 28, Issue 10, 2007, Pages 919-921

  Simoen, Eddy ^a   Claeys, C ^a,b   Chung, T M ^c   Flandre, D ^c   Raskin, J P ^c  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

^c UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

Fully depleted (FD) silicon on insulator (SOI); Graded channel (GC) transistors; Low frequency (LF) noise

Indexed keywords

GATES (TRANSISTOR); SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

BACK-GATE BIAS; GRADED-CHANNEL (GC) TRANSISTORS; LOW-FREQUENCY (LF) NOISE;

MOSFET DEVICES;

EID: 34948899790     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.905958     Document Type: Article

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