The low-frequency noise behaviour of graded-channel SOI nMOSFETs

Solid-State Electronics

Volumn 51, Issue 2, 2007, Pages 260-267

  Simoen, E ^a   Claeys, C ^a,b   Chung, T M ^c   Flandre, D ^c   Pavanello, M A ^d,e   Martino, J A ^d,e   Raskin, J P ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^d CENTRO UNIVERSITÁRIO DA FEI   (Brazil)

^e UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Analog performance; Graded channel SOI MOSFET; Low frequency noise; Mobility fluctuations; Number fluctuations

Indexed keywords

CARRIER MOBILITY; DOPING (ADDITIVES); GAIN MEASUREMENT; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE; TRANSISTORS;

ANALOG PERFORMANCE; GRADED CHANNEL SOI MOSFET; LOW FREQUENCY NOISE; MOBILITY FLUCTUATIONS; NUMBER FLUCTUATIONS;

MOSFET DEVICES;

EID: 33847274701     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.01.003     Document Type: Article

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