Impact of halo implantation on 0.13 μm floating body partially depleted SOI n-MOSFETs in low temperature operation

Solid-State Electronics

Volumn 49, Issue 8, 2005, Pages 1274-1281

  Pavanello, Marcelo Antonio ^a,b   Martino, João Antonio ^a,b   Simoen, Eddy ^c   Claeys, Cor ^c,d  

^a CENTRO UNIVERSITÁRIO DA FEI   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

DIBL; Low temperature; Partially depleted; Self heating; Silicon on insulator; Thermal resistance

Indexed keywords

ELECTRIC CONDUCTANCE; HEAT RESISTANCE; ION IMPLANTATION; LOW TEMPERATURE OPERATIONS; SILICON ON INSULATOR TECHNOLOGY;

DIBL; HALO IMPLANTATION; LOW TEMPERATURE; PARTIALLY DEPLETED; SELF-HEATING;

MOSFET DEVICES;

EID: 24144468950     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.06.007     Document Type: Article

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