On the great potential of non-doped MOSFETs for analog applications in partially-depleted SOI CMOS process

Solid-State Electronics

Volumn 49, Issue 5, 2005, Pages 708-715

  Kilchytska, V ^a   Levacq, D ^a   Vancaillie, L ^a   Flandre, D ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

Analog applications; Floating body effects; Non doped devices; SOI MOSFETs

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIFFUSION; DOPING (ADDITIVES); GATES (TRANSISTOR); IMPACT IONIZATION; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; VOLTAGE CONTROL;

ANALOG APPLICATIONS; FLOATING-BODY EFFECTS; LINEAR CIRCUITS; NON-DOPED DEVICES; SOI MOSFETS;

MOSFET DEVICES;

EID: 14844320546     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.09.004     Document Type: Conference Paper

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