Generation-Recombination Noise in the Near Fully Depleted SIMOX SOI n-MOSFET - Physical Characteristics and Modeling

IEEE Transactions on Electron Devices

Volumn 50, Issue 12, 2003, Pages 2490-2498

  Ang, D S ^a   Lun, Z ^b,c   Ling, C H ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Generation recombination (G R) noise; Lorentzian; Low frequency noise; Shot noise; Silicon on insulator (SOI); SIMOX

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC IMPEDANCE; ELECTRON TRAPS; ELECTRON TUNNELING; SEMICONDUCTOR JUNCTIONS; SHOT NOISE; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS; TRANSISTORS;

GENERATOR-RECOMBINATION (GR) NOISE; LOW-FREQUENCY NOISE;

MOSFET DEVICES;

EID: 0347968287     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.819371     Document Type: Article

References (20)

1. P. Gentil and S. Chausse, "Low frequency noise measurements on silicon-on-sapphire (SOS) MOS transistors," Solid State Electron., vol. 20, pp. 935-940, 1977.
2. R. M. Fox and S. G. Lee, "Low frequency noise in SIMOX MOSFETs," Proc. IEEE SOS/SOI Technol. Workshop, pp. 36-36, 1988.
3. J. Chen, P. Fang, P. K. Ko, C. Hu, R. Solomon, T. Y. Chan, and C. G. Sodini, "Noise overshoot at drain current kink in SOI MOSFET," Proc. IEEE SOI Conf., pp. 40-41, 1990.
4. E. Simoen and C. Claeys, "Evidence for an alternative, hole-trapping related random telegraph signal mechanism in n-channel silicon-on-insulator metal-oxide-semiconductor transistors," Appl. Phys. Lett., vol. 62, pp. 876-878, 1993.
5. E. Simoen, U. Magnusson, A. L. P. Rotondaro, and C. Claeys, "The kink-related excess low-frequency noise in silicon-on-insulator MOSTs," IEEE Trans. Electron Devices, vol. 41, pp. 330-339, Mar. 1994.
6. N. Lukyanchikova, M. Petrichuk, N. Garbar, E. Simoen, and C. Claeys, "Back and front interface related generation-recombination noise in buried-channel SOI pMOSFETs," IEEE Trans. Electron Devices, vol. 43, pp. 417-423, Mar. 1996.
7. Y.-C. Tseng, W.-L. M. Huang, P. J. Welch, J. M. Ford, and J. C. S. Woo, "Empirical correlation between AC kink and low-frequency noise overshoot in SOI MOSFETs," IEEE Electron Device Lett., vol. 19, pp. 157-159, May 1998.
8. F. Faccio, F. Anghinolfi, E. H. M. Heijne, P. Jarron, and S. Cristoloveanu, "Noise contribution of the body resistance in partially-depleted SOI MOSFETs," IEEE Trans. Electron Devices, vol. 45, pp. 1033-1038, May 1998.
9. W. Jin, P. C. H. Chan, S. K. H. Fung, and P. K. Ko, "Shot-noise-induced excess low-frequency noise in floating-body partially depleted SOI MOSFETs," IEEE Trans. Electron Devices, vol. 46, pp. 1180-1185, June 1999.
10. Y.-C. Tseng, W. M. Huang, V. Ilderem, and J. C. S. Woo, "Floating body induced prekink excess low-frequency noise in submicron SOI CMOSFET technology," IEEE Electron Device Lett., vol. 20, pp. 484-486, Sept. 1999.
11. 2 interface," Semicond. Sci. Technol., vol. 14, pp. 775-783, 1999.
12. G. O. Workman and J. G. Fossum, "Physical noise modeling of SOI MOSFETs with analysis of the Lorentzian component in the low-frequency noise spectrum," IEEE Trans. Electron Devices, vol. 47, pp. 1192-1201, June 2000.
13. Y.-C. Tseng, W. M. Huang, M. Mendicino, D. J. Monk, P. J. Welch, and J. C. S. Woo, "Comprehensive study on low-frequency noise characteristics in surface channel SOI CMOSFETs and device design optimization for RF ICs," IEEE Trans. Electron Devices, vol. 48, pp. 1428-1437, July 2001.
14. D. S. Ang, Z. Lun, and C. H. Ling, "Generation-recombination noise in the near fully depleted SIMOX n-MOSFET operating in the linear region," IEEE Electron Device Lett., vol. 22, pp. 545-547, Nov. 2001.
15. H. K. Lim and J. G. Fossum, "Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFETs," IEEE Trans. Electron Devices, vol. ED-30, pp. 1244-1251, Oct. 1983.
16. L. D. Yau and C. T. Sah, "Theory and experiments of low-frequency generation-recombination noise in MOS transistors," IEEE Trans. Electron Devices, vol. ED-16, pp. 170-177, Feb. 1969.
17. D. C. Murray, A. G. R. Evans, and J. C. Carter, "Shallow defects responsible for GR noise in MOSFETs," IEEE Trans. Electron Devices, vol. 38, pp. 407-416, Feb. 1991.
18. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology. New York: Wiley, 1982.
19. J. Jomaah, F. Balestra, and G. Ghibaudo, "Experimental investigation and numercial simulation of low-frequency noise in thin-film SOI MOSFETs," Physica Status Solidi (a), vol. 142, pp. 533-537, 1994.
20. S. Cristoloveanu, "Oxygen-related activity and other specific electrical properties of SIMOX," Vacuum, vol. 42, pp. 371-378, 1991.