High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy

Materials Letters

Volumn 59, Issue 18, 2005, Pages 2370-2373

  Ji, S Y ^a   Lalev, G M ^b   Wang, J F ^a   Uchikoshi, M ^c   Isshiki, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b CARDIFF UNIVERSITY   (United Kingdom)

^c SONY CORPORATION   (Japan)

Author keywords

FeSi2; Epitaxial growth; MBE; Semiconductor

Indexed keywords

CRYSTALLIZATION; EPITAXIAL GROWTH; FILM GROWTH; IRON COMPOUNDS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; SINGLE CRYSTALS; STOICHIOMETRY;

Β-FESI2; ANNEALING TREATMENT; EPITAXIAL FILM GROWTH; PYROLYTIC BORON NITRIDE (PBN);

THIN FILMS;

EID: 19944380489     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2005.01.088     Document Type: Article

References (18)

1. N. Christensen Phys. Rev., B 42 1990 7148
2. K. Lefki, and P. Muret J. Appl. Phys. 74 1993 1138
3. N. Jedrecy, Y. Zheng, A. Waldhauer, M. Sauvage-Simkin, and P. Pinchaux Phys. Rev., B 48 1993 8801
4. N. Onda, H. Sirringhaus, S. Goncalves-Conto, C. Schwarz, S. Zehnder, and H. Kanel Appl. Surf. Sci. 73 1993 124
5. H. Sirringhaus, N. Onda, E. Muller-Gubler, P. Muller, R. Stalder, and H. Kanel Phys. Rev., B 47 1993 10567
6. J.E. Mahan, K.M. Geib, G.Y. Robinson, R.G. Long, X.H. Yan, G. Bai, M.A. Nicolet, and M. Nathan Appl. Phys. Lett. 56 1990 2126
7. K. Akiyama, S. Ohya, and H. Funakubo Thin Solid Films 461 2004 40
8. A. Rizzi, B.N.E. Rosen, D. Freundt, Ch. Dieker, H. Luth, and D. Gerthsen Phys. Rev., B 51 1995 17780
9. C. Spinella, S. Cotta, C. Bongiorno, S. Pannitteri, and M.G. Grimaldi Appl. Phys. Lett. 76 2000 173
10. T. Yoshitake, M. Yatabe, M. Itakura, N. Kuwano, Y. Tomokiyo, and K. Nagayama Appl. Phys. Lett. 83 2003 3057
11. A. Valentini, E. Chimenti, and A. Cola Mater. Sci. Forum 203 1996 173
12. R. Kuroda, Z.X. Liu, Y. Fukuzawa, Y. Suzuki, M. Osamura, S.N. Wang, N. Otogawa, T. Ootsuka, T. Mise, Y. Hoshino, Y. Nakayama, H. Tanoue, and Y. Makita Thin Solid Films 461 2004 34
13. Y. Makita, Y. Nakayama, Y. Fukuzawa, S.N. Wang, N. Otogawa, Y. Suzuki, Z.X. Liu, M. Osamura, T. Ootsuka, T. Mise, and H. Tanoue Thin Solid Films 461 2004 202
14. J. Chevrier, V. Lehanh, S. Nitsche, and J. Derrien Appl. Surf. Sci. 56 1992 438
15. N. Hiroi, T. Suemasu, K. Takakura, N. Seki, and F. Hasegawa Jpn. J. Appl. Phys. 40 2001 L1008
16. K. Geib, E. John, M. Mahan, R.G. Long, and G. Bai J. Appl. Phys. 70 1991 1730
17. G.M. Lalev, J.F. Wang, J.W. Lim, S. Abe, K. Masumoto, and M. Isshiki Appl. Surf. Sci. 58 2004 1607
18. M. Takauji, N. Seki, T. Suemasu, F. Hagasewa, and M. Ichida J. Appl. Phys. 96 2004 2561