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Volumn 95, Issue 8, 2004, Pages 4019-4024

Reduction of iron diffusion in silicon during the epitaxial growth of β-FeSi2 films by use of thin template buffer layers

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; DIFFUSION; EPITAXIAL GROWTH; GRAIN BOUNDARIES; HIGH TEMPERATURE EFFECTS; IRON COMPOUNDS; KINETIC ENERGY; LEAKAGE CURRENTS; LIGHT EMITTING DIODES; MULTILAYERS; RAMAN SCATTERING; REDUCTION; SCANNING ELECTRON MICROSCOPY; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY;

EID: 2342592128     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1682683     Document Type: Article
Times cited : (43)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.