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Volumn 95, Issue 8, 2004, Pages 4019-4024
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Reduction of iron diffusion in silicon during the epitaxial growth of β-FeSi2 films by use of thin template buffer layers
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
DEFECTS;
DIFFUSION;
EPITAXIAL GROWTH;
GRAIN BOUNDARIES;
HIGH TEMPERATURE EFFECTS;
IRON COMPOUNDS;
KINETIC ENERGY;
LEAKAGE CURRENTS;
LIGHT EMITTING DIODES;
MULTILAYERS;
RAMAN SCATTERING;
REDUCTION;
SCANNING ELECTRON MICROSCOPY;
SPUTTERING;
TRANSMISSION ELECTRON MICROSCOPY;
BUFFER LAYERS;
FACING TARGET SPUTTERING (FTS);
HIGH-RESOLUTION IMAGES;
PHOTOSENSORS;
TRANSVERSE OPTICAL (TO) PHONONS;
SEMICONDUCTING FILMS;
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EID: 2342592128
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1682683 Document Type: Article |
Times cited : (43)
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References (15)
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