Temperature dependence of current-voltage characteristics of npn -type GaNInGaN double heterojunction bipolar transistors

Applied Physics Letters

Volumn 91, Issue 13, 2007, Pages

  Nishikawa, Atsushi ^a   Kumakura, Kazuhide ^a   Makimoto, Toshiki ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GAIN MEASUREMENT; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; TEMPERATURE MEASUREMENT;

BACK-INJECTION CURRENT; CARRIER DIFFUSION; P-INGAN BASE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 34848819674     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2793819     Document Type: Article

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