High Current Gains Obtained by InGaN/GaN Double Heterojunction Bipolar Transistors

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 183-186

  Makimoto, T ^a   Kumakura, K ^a   Kobayashi, N ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000247655     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<183::AID-PSSA183>3.0.CO;2-L     Document Type: Article

References (10)

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