Growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 730-733

  Lambert, D J H ^a   Huang, J J ^b   Shelton, B S ^a   Wong, M M ^a   Chowdhury, U ^a   Zhu, T G ^a   Kwon, H K ^a   Liliental Weber, Z ^c   Benarama, M ^c   Feng, M ^b   Dupuis, R D ^a  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 18344400601     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00808-3     Document Type: Article

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