High current gain InGaN/GaN HBTs with 300°C operating temperature

Electronics Letters

Volumn 42, Issue 11, 2006, Pages 661-663

  Keogh, D M ^a   Asbeck, P M ^a   Chung, T ^b   Limb, J ^b   Yoo, D ^b   Ryou, J H ^b   Lee, W ^b   Shen, S C ^b   Dupuis, R D ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; GAIN CONTROL; NITROGEN; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; THERMAL EFFECTS;

GRADED EMITTER DESIGN; HIGH CURRENT GAIN; INGAN/GAN; KNEE VOLTAGES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33744547645     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20060333     Document Type: Article

References (14)

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