Very high voltage operation (> 330 V) with high current gain of AlGaN/GaN HBTs

IEEE Electron Device Letters

Volumn 24, Issue 3, 2003, Pages 141-143

  Xing, Huili ^a   Chavarkar, Prashant M ^b   Keller, Stacia ^a   DenBaars, Steven P ^a   Mishra, Umesh K ^a  

^a Santa Barbara   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

AlGaN; Breakdown voltage; Common emitter; Current gain; GaN; Gummel plot; HBTs; Regrown emitters

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TEMPERATURE;

ALUMINUM GALLIUM NITRIDE; COMMON EMITTER; CURRENT GAIN; DIELECTRIC MASK;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0038614798     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.811400     Document Type: Letter

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