Pnp AlGaN/GaN heterojunction bipolar transistors operating at 300°C

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 443-446

  Kumakura, K ^a   Makimoto, T ^a   Kobayashi, N ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS;

HIGH TEMPERATURE OPERATION; INJECTION EFFICIENCY; MAXIMUM CURRENT GAIN; OHMIC CHARACTERISTICS; SATURATION PROPERTIES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036960113     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<443::AID-PSSA443>3.0.CO;2-N     Document Type: Article

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