Low-current blocking temperature writing of double barrier magnetic random access memory cells

Applied Physics Letters

Volumn 84, Issue 6, 2004, Pages 945-947

  Wang, Jianguo ^a,b   Freitas, P P ^a,b  

^a INESC   (Portugal)

^b INSTITUTO SUPERIOR TÉCNICO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; COBALT COMPOUNDS; CRITICAL CURRENTS; ELECTRIC BREAKDOWN; MAGNETIC DEVICES; MANGANESE COMPOUNDS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS; TUNNEL JUNCTIONS;

JOULE HEATING; LOW CURRENT BLOCKING TEMPERATURE WRITING; MAGNETIC RANDOM ACCESS MEMORY CELLS; PINNED LAYER WRITING;

RANDOM ACCESS STORAGE;

EID: 1542276813     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1646211     Document Type: Article

References (8)

1. S. S. P. Parkin, K. P. Roche, M. G. Samant, P. M. Rice, etc., J. Appl. Phys. 85, 5828 (1999).
2. S. Tehrani, J. M. Slaughter, E. Chen, M. Durlam, J. Shi, and M. De Herrera, IEEE Trans. Magn. 35, 2814 (1999).
3. R. C. Sousa, P. P. Freitas, V. Chu, and J. P. Conde, Appl. Phys. Lett. 74, 3893 (1999).
4. R. S. Beech, J. A. Anderson, A. V. Pohm, and J. M. Daughton, J. Appl. Phys. 87, 6403 (2000).
5. J. M. Daughton and A. V. Pohm, U.S. Patent No. 6,535,416 B1 (2003).
6. J. M. Daughton and A. V. Pohm, J. Appl. Phys. 93, 7304 (2003).
7. R. I. Waite, A. V. Pohm, and C. S. Comstock, J. Appl. Phys. 63, 3151 (1998).
8. Z. Zhang, Z. Zhang, and P. P. Freitas, J. Appl. Phys. 93, 8552 (2003).